Ultrasonic Attenuation of Heavily Doped Semiconductors in the Weakly Localized Regime
نویسندگان
چکیده
We have theoretically studied the ultrasonic attenuation of heavily doped semiconductors with a single-valley or a many-valley in the weakly localized regime. The following has been found. A contribution from quantum correction terms to the attenuation coefficient Aa decreases with increasing temperature. In the many-valley case Aa decreases with increasing the strength of the intervalley scattering. The sign of Aa is the same as that of Au, the quantum correction to the electrical conductivity, in the many-valley case, but opposite in the single-valley case.
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